Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

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Shenzhen Hengstar Technology Co., Ltd.
HomeLihlahisoaSetshelo sa Module oa SepisDDR1 UDIMM UDOLE SOUND

DDR1 UDIMM UDOLE SOUND

Mofuta oa Lekhetho:
L/C,T/T,D/A
Incoterm:
FOB,EXW,CIF
Min. Laela:
1 Piece/Pieces
Lipalangoang:
Ocean,Air,Express,Land
  • Tlhaloso ea Sehlahisoa
Overview
Litšobotsi tsa Sehlahisoa

Setšoantšo sa No.NSO4GU3AB

Phepelo Matla & Informations eketsehilen...

LipalangoangOcean,Air,Express,Land

Mofuta oa LekhethoL/C,T/T,D/A

IncotermFOB,EXW,CIF

Ho paka le ho tlisa
Ho rekisa lihlopha:
Piece/Pieces

4GB 1600MHHZ 240-PIN DDR3 UDIMM


Ntlafatso Nalane

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Ho odara tafole ea tlhaiso-leseling

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Tlhaloso
Li-hychroffied DDR3 sdram dimm (Tekanyetso ea memo e tlase habeli NS04gu3ab ke 512m-bit tse peli tsa xgb ddr3-1600 cl1 1,5v sdram SPD e hlophisitsoe ho Jedec Standard DDRY DDR3-1600 Nako ea 11-11-11 ka 1.5v. Demimm e ngoe le e ngoe ea 20 e sebelisa menoana ea mabitso ea khauta. SDRAM e sa sebetsoeng e etselitsoe ho sebelisoa e le memori e meholo ha e kenngoa litsamaiso tse kang li-PC le Mesebetsi ea Mesebetsi.


Likaroloana
Phepelo ea power: VDD = 1.5v (1.425v ho 1.575v)
vddq = 1.5v (1.425v ho 1.575v)
800MHZ Fck bakeng sa 1600BB / Sec / PIN
8 e ikemetseng e ntle
proGRAMMABSA CAS LAGON: 11, 9, 9, 7, 6
proGgraMMALD EXPPITATERable: 0, CL - kapa CL - Clack 1
8-bit Pre-Fet-Fetch
000 ...
Zimellang e fapaneng ea data ea data
inyast (Boitšoaro); Calibration ea ka hare ea kahare ka zq phini ea zq (rzq: 240 ohm ± 1%)
on Die Terries u sebelisa PINT EDT PIN
ajekrea e khathollang
usnchronous reset
Polotso ea Drive ea data ea data
Fly-ka topology
pcb: bophahamo ba 1.18 "(30mm)
rohs e lumellanang le halogen-free


Paramente ea Nako ea Nako

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Tafole ea aterese

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Litlhaloso tsa Pic

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

Lintlha : Lethathamo la Tlhatlhobo ea PIN ke lenane le felletseng ke lenane le felletseng la lipina tsohle tsa DDR3. Lintho tsohle li thathamisitsoe se ke oa tšehetsoa ho mojule ona. Sheba likabelo tsa DIN bakeng sa tlhaiso-leseling e ikhethang ho mojule ona.


Sesebelisoa sa S60l sa Thibelo

4GB, Module oa 512MMX64 (2rank of X8)

1


2


Hlokomela:
1.The ea LQ ea zq ho karolo ea DDR3 e ngoe le e ngoe ea DDR3 e hokahane le Mofumahali oa pele oa 240,000 ± 1% e tlamelletsoeng ho ea tlase. E sebelisetsoa ho lekanya ha taelo ea karolo ea motsoako le mokhanni oa litšupiso.



Mefuta ea Module


Sheba

3

Sheba

4

Lintlha:
1. Boholo bo ka millimeter (inches); Max / min kapa min kapa e tloaelehileng) moo ho hlokometsoeng teng.
2.Tolelarance ka boholo bohle ± 0.15mmmm ntle le ha e hlalositsoe ka tsela e 'ngoe.
3. Timani ea likarolo tse fapaneng tsa ho bua feela.

Lihlopha tsa Meriana : Setshelo sa Module oa Sepis

E-mail ho mofani oa sena
  • *Sehlooho:
  • *Ho:
    Mr. Jummary
  • *Imeile:
  • *Molaetsa:
    Molaetsa oa hau o tlameha ho ba pakeng tsa litlhaku tse 20-8000
HomeLihlahisoaSetshelo sa Module oa SepisDDR1 UDIMM UDOLE SOUND
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Romela